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Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA

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Document pages: 11 pages

Abstract: High Q-factor inductors are critical in designing high performanceRF microwave circuits on SOI technology. Substrate losses is a key limitingfactor when designing inductors with high Q-factors. In this context, we reporta substrate engineering method that enables improvement of quality factors ofalready fabricated inductors on SOI. A novel femtosecond laser milling processis utilized for the fabrication of locally suspended membranes of inductorswith handler silicon completely etched. Such flexible membranes suspendedfreely on the BOX show up to 92 improvement in Q factor for single turninductor. The improvement in Q-factor is reported on large sized inductors dueto reduced parallel capacitance which allows enhanced operation of inductors athigh frequencies. A compact model extraction methodology has been developed tomodel inductor membranes. These membranes have been utilized for theimprovement of noise performance of LNA working in the 4.9,5.9 GHz range. A 0.1dB improvement in noise figure has been reported by taking an existing designand suspending the input side inductors of the LNA circuit. The substrateengineering method reported in this work is not only applicable to inductorsbut also to active circuits, making it a powerful tool for enhancement of RFdevices.

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