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Methods to Quantify Dislocation Behavior with Dark-field X-ray Microscopy Timescans of Single-Crystal Aluminum

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Document pages: 12 pages

Abstract: Crystal defects play a large role in how materials respond to theirsurroundings, yet there are many uncertainties in how extended defects form,move, and interact deep beneath a material s surface. A newly developed imagingdiagnostic, dark-field X-ray microscopy (DFXM) can now visualize the behaviorof line defects, known as dislocations, in materials under varying conditions.DFXM images visualize dislocations by imaging the very subtle long-rangedistortions in the material s crystal lattice, which produce a characteristicadjoined pair of bright and dark regions. Full analysis of how thesedislocations evolve can be used to refine material models, however, it requiresquantitative characterization of the statistics of their shape, position andmotion. In this paper, we present a semi-automated approach to effectivelyisolate, track, and quantify the behavior of dislocations as composite objects.This analysis drives the statistical characterization of the defects, toinclude dislocation velocity and orientation in the crystal, for example, andis demonstrated on DFXM images measuring the evolution of defects at 98$ $ ofthe melting temperature for single-crystal aluminum, collected at the EuropeanSynchrotron Radiation Facility.

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