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p-Diamond Si GaN and InGaAs TeraFETs

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Document pages: 8 pages

Abstract: p-diamond field effect transistors (FETs) featuring large effective mass,long momentum relaxation time and high carrier mobility are a superb candidatefor plasmonic terahertz (THz) applications. Previous studies have shown thatp-diamond plasmonic THz FETs (TeraFETs) could operate in plasmonic resonantmode at a low frequency window of 200 GHz to ~600 GHz, thus showing promisingpotential for beyond 5G sub-THz applications. In this work, we explore theadvantages of p-diamond transistors over n-diamond, Si, GaN and InGaAs TeraFETsand estimate the minimum mobility required for the resonant plasmons. Ournumerical simulation shows that the p-diamond TeraFET has a relatively lowminimum resonant mobility, and thus could enable resonant detection. Thediamond response characteristics can be adjusted by changing operatingtemperature. A decrease of temperature from 300 K to 77 K improves thedetection performance of TeraFETs. At both room temperature and 77 K, thep-diamond TeraFET presents a high detection sensitivity in a large dynamicrange. When the channel length is reduced to 20 nm, the p-diamond TeraFETexhibits the highest DC response among all types of TeraFETs in a largefrequency window.

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