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Design of a $β$-Ga$_2$O$_3$ Schottky Barrier Diode With p-type III-Nitride Guard Ring for Enhanced Breakdown

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Document pages: 7 pages

Abstract: This work presents the electrostatic analysis of a novel Ga$ 2$O$ 3$ verticalSchottky diode with three different guard ring configurations to reduce thepeak electric field at the metal edges. Highly doped p-type GaN, p-typenonpolar AlGaN and polarization doped graded p-AlGaN are simulated and analyzedas the guard ring material, which forms a heterojunction with the Ga$ 2$O$ 3$drift layer. Guard ring with non-polar graded p-AlGaN with a bandgap largerthan Ga$ 2$O$ 3$ is found to show the best performance in terms of screeningthe electric field at the metal edges. The proposed guard ring configuration isalso compared with a reported Ga$ 2$O$ 3$ Schottky diode with no guard ring anda structure with a high resistive Nitrogen-doped guard ring. The optimizeddesign is predicted to have breakdown voltage as high as 5.3 kV and a specificon-resistance of 3.55 m$ Omega$-cm$^2$ which leads to an excellent power figureof merit of 7.91 GW cm$^2$.

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