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Experimental Measurement of Minority Carriers Effective Lifetime in Silicon Solar Cell Using Open Circuit Voltage Decay under Magnetic Field in Transient Mode

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Document pages: 10 pages

Abstract: This manuscript presents a simple method for excess minority carriers’lifetime measurement withinthe base region of p-n junction polycrystalline solar cell in transient mode. Thiswork is an experimental transient 3-Dimensionnal study. The magnitude of themagnetic field B is varied from 0 mT to 0.045 mT. Indeed, the solar cell isilluminated by a stroboscopic flash with air mass 1.5 and under magnetic field in transient state. The experimental details areassumed in a figure. The procedure is outlined by the Open Circuit VoltageDecay analysis. Effective minority carrier life-time is calculated by fittingthe linear zone of the transient voltage decay curve because linear decay is an ideal decay. Thekaleidagraph software permits access to the slope of the curve which isinversely proportional to the lifetime.The external magnetic effects onminority carriers’ effective lifetime is then presentedand analyzed. Theanalysis shows that thecharge carrier’seffective lifetime decrease with the magnetic field increase.

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