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Locally tunable composition of single crystal silicon germanium on insulator for low cost devices

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Document pages: 11 pages

Abstract: Achieving high-quality silicon germanium on insulator (sgoi) is a major goal in the field of silicon photonics, because it is possible to make very low-power active devices work at 1.3 communication wavelength μ M and 1.55   μ m。 In addition, sgoi has the potential to form faster electronic devices, such as BiCMOS transistors, and may also form the backbone of a new silicon photonics platform, which extends to mid infrared wavelengths for sensing, telecommunications and other fields. In this paper, we propose a new method to form defect free single crystal sgoi by rapid melt growth technology. We use custom structures to form sgoi strips with locally uniform composition, which is suitable for the most advanced device manufacturing. This is a bookhnique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

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