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Effect of impurities on radiation response of TlBr semiconductor crystal

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Document pages: 10 pages

Abstract: Two commercial TlBr salts are used as raw materials for crystal growth and as radiation detectors. Previously, TlBr salt was purified once, twice and three times by repeated Bridgman method. After each purification process, the purification efficiency was evaluated by inductively coupled plasma mass spectrometry (ICP-MS). A compartment model is proposed to fit the functional relationship between impurity concentration and Bridgeman growth repetition times, and determine the segregation coefficient of impurities in the crystal. The crystal structure, stoichiometric ratio and surface morphology of crystals grown with different purification numbers were systematically evaluated. The crystal is evaluated as a radiation semiconductorr detector, measurements of its resistivity and gamma-ray spectroscopy were carried out, using 241Am and 133Ba sources. A significant improvement of the radiation response was observed in function of the crystal purity.

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