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Effect of chip connection quality on mechanical and thermal properties of high power LED packaging

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Document pages: 8 pages

Abstract: The reliability of high-power light emitting diode (LED) devices largely depends on the chip connection quality, because the gap may increase the junction temperature and total thermal resistance of LED devices. Chip bonding materials play a key role in the thermal management of high-power LED packaging by providing low contact thermal resistance. The thermal analysis and mechanical analysis were carried out by experiment and thermal simulation. The quantitative analysis results show that according to the differential structure function of thermal transient characteristics, the thermal resistance of chip connection layer (caused by the gap in chip connection material and chip connection layer) plays an important role in the total thermal resistance of high-power LED packaging. Increase of porosity in die connecting layer causes the increases of thermal resistance of die-attach layer; the thermal resistance increased by 1.95 K W when the void fraction increased to 62.45 . The voids also make an obvious influence on thermal stress and thermal strain of chip; the biggest thermal stress of chip was as high as 847.1 MPa compared to the 565.2 MPa when the void fraction increases from being void-free to 30 in the die-attach layer.

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