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RF magnetron sputtering n-type β- Calculation of low temperature heterojunction parameters of FeSi2 thin film and p-type Si (111) substrate heterojunction

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Document pages: 8 pages

Abstract: In this study, n-type films were prepared by RF magnetron sputtering at 560 ° C substrate temperature and Ar pressure β- FeSi2 p-type Si Heterojunction, in which n-type β- FeSi2 thin films were epitaxially grown on p-type Si (111) substrates

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