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Thermal analysis of Si / GaAs bonded wafer and mitigation strategy of bonding stress

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Document pages: 8 pages

Abstract: In order to effectively reduce the thermal stress of Si GaAs bonded wafer during annealing, firstly, based on E. suhir s bimaterial thermal stress theory, the thermal stress at the wafer bonding interface is analyzed, and the thermal stress distribution formula is obtained. Then, the thermal stress distribution curve of Si GaAs bonding interface is studied by finite element method and compared with the results of E. suhir bimaterial thermal stress theory. Finally, some effective strategies to reduce the thermal stress at the bonding interface are proposed.

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