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Theoretical study on high frequency response of InGaAs / AlAs double barrier nanostructures

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Document pages: 7 pages

Abstract: This paper includes the numerical calculation of the response of InGaAs AlAs resonant tunneling diode (RTD) to AC electric field in a wide amplitude and frequency range. These calculations are carried out in a coherent quantum mechanical model based on the solution of the exact open boundary conditions of the time-dependent Schrodinger equation. The results show that with the increase of magnetic field amplitude, at high frequency( Γ Is the width of resonance energy level), and the active current can reach a high value equivalent to the DC current in resonance. This shows that the quantum mechanism of RTD can be realized when the radiation transition is between the quasi level and the resonant level. In addition, there is an exciting hiher quasi-energetic levels in AC electric fields, which in particular results in a slow droop of the active current as the field amplitude increases. It also results in potentially abrupt changes of the operating point position by the value. This makes it possible to achieve relatively high output powers of InGaAs AlAs RTD having an order of 105 W cm2 at high frequencies.

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