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Formation and physical properties of h-BN atomic layer: first principle density functional study

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Document pages: 6 pages

Abstract: Hexagonal boron nitride (h-BN) atomic layer has attracted extensive attention as a potential device material for Nano Electronics, optoelectronics and spintronics in the future. This paper reviews the latest progress of first principles density functional in the study of h-BN layers. We show the physical properties caused by the introduction of various defects in the h-BN layer. We further discuss the relationship between defect size, strain, magnetic and electronic properties.

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