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Study on boron low temperature diffusion 4H SiC Based p-i-n junction

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Document pages: 10 pages

Abstract: At a low temperature of 1150-1300 ° C, a new method of boron diffusion is used to form P-I SiC junction and I region in one process. Because the junction formation conditions in this method are basically different from those in traditional diffusion (low temperature and diffusion process are accompanied by the formation of structural defects), it is particularly meaningful to determine the advantages and disadvantages of the new diffusion method. The developed sicp-i-n junction diode has fast switching time and the duration of reverse recovery current is less than 10 seconds   the breakdown voltage is 120-140 nanosecond   v. because the temperature of diffusion process is lower than the melting temperature, the fabricated diode can work at a temperature of up to 300 ° Cure of silicon, this new technology allows fabrication of diodes on the base of SiC Si epitaxial structures.

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