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Plasma assisted molecular beam epitaxy for UV sensing β- Structural, optical and electrical properties of Ga2O3 thin films

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Document pages: 6 pages

Abstract: C-plane sapphire substrates were grown by plasma assisted molecular beam epitaxy β- Ga2O3 film. Thin films were grown using oxygen provided by elemental gallium source and RF plasma source. Reflection high energy electron diffraction (RHEED) is used to monitor surface quality in real time. Both in-situ RHEED and in-situ X-ray diffraction confirmed that a single crystal with excellent crystallinity was formed on C-plane sapphire β Phase film. The thickness of the film was measured by ellipsometry, and the values in 11.6 – 18.8   wavelength range and refractive index dispersion curve were given. UV-vis transmittance measurements show that, β- The strong absorption of Ga2O3 begins at ∼ 270   nm. Top metal contacts were deposited by thermal evaporation for I-V characterization, whch has been carried out in dark, as well as under visible and UV light illumination. The optical and electrical measurements showed that the grown thin films of β-Ga2O3 are excellent candidates for deep-ultraviolet detection and sensing.

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