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Simulation and experimental study on the properties of Ag / SnO2 contact materials doped with different CE

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Document pages: 9 pages

Abstract: SnO2 in Ag SnO2 contact material is a kind of wide gap semiconductor material with high hardness and almost insulation. In the process of use, the contact resistance is large and the temperature rise is high, which reduces the reliability of the contact and shortens the electrical life. In order to improve the properties of Ag SnO2 contact materials, based on the first principle of density functional theory, a method of doping SnO2 was proposed, and the electrical and mechanical properties of different proportions of rare earth Ce were calculated. The calculation results of energy band, density of States and elastic constant show that when the CE doping ratio is 0.125, the electron mobility is the highest and the conductivity is the best; The hardness decreases and the universal elasticity deterioratesy index is the smallest. Finally, in the experiment, SnO2 powders with different doping ratios are prepared by the sol-gel method, and Ag SnO2 contacts with different doping proportions are prepared by powder metallurgy. Arc energy, contact resistance, and hardness are measured; scanning electron microscopy was used to observe and analyze the surface morphology. The final simulation and experimental results are well matched.

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