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Polycrystalline Silicon Solar Cell p-n Junction Capacitance Behavior Modelling under an Integrated External Electrical Field Source in Solar Cell System

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Document pages: 11 pages

Abstract: Thestate of the p-n junction is very important to explain the performances of a solar cell. Some works give the influence of the electric field on thejunction capacitance. However, these works do not relate the quality of the p-n junction under the electic field. The present manuscript is about atheoretical modelling of the p-n junction capacitance behavior of the polycrystalline silicon solar cellunder an integration of the external electrical field source. An externalelectrical source is integrated in a solar cell system. The electronic carrierscharge generated in the solar cell crossed mainly the junction with the great strength external electrical field.In open circuit, this crossing of the electronic charge carriers causes thethermal heating of the p-n junction by Joule effect. The p-n junction capacitance plotted versus the junction dynamic velocity and thephoto-voltage for different external electrical fields. The electric fieldcauses the decrease of the photo-voltage mainly the open-circuit photo-voltage.The decrease of the photo-voltage translates the narrowing of the Space ChargeRegion (SCR). The average value of the external electric field used in thisstudy is not sufficient to cause the breakdown of the p-n junction of the solar cell system under integration of the externalelectrical field production source. The increase of the electrical field causesrather the narrowing of the SCR. That can provide an improvement of the solarcell’s electrical outputs.

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