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Perovskite Self-Passivation with PCBM for Small Open-Circuit Voltage Loss

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Document pages: 16 pages

Abstract: It is well known that [6,6]-phenyl-C61-butyric acid methylester (PCBM) is a common n-type passivation material in PSCs, usually used asan interface modification layer. However, PCBM is extremely expensive and isnot suitable for future industrialization. Herein, the various concentrationsof PCBM as an additive are adopted for PSCs. It not only avoids the routineprocess of spin coating the multi-layer films, but also reduces the PCBMmaterial and cost. Meanwhile, PCBM can passivate the grain surface and modulatemorphology of perovskite films. Furthermore, the most important opticalparameters of solar cells, the current density (Jsc), fill factor (FF), open-circuit voltage (Voc) and power conversionefficiencies (PCE) were improved. Especially, when the PCBM doping ratio in CH3NH3PbI3 (MAPbI3) precursor solution was 1 wt ,the device obtained the smallest Voc decay (less than 1 ) in the p-i-n type PSCs with poly (3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) as hole transport layer (HTL) and fullerene (C60)as electron transport layer (ETL). The PSCs Voc stability improvement is attributed toenhanced crystallinity of photoactive layer and decreased non-radiative recombinationby PCBM doping in the perovskites.

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