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On Approach to Increase Integration Rate of Elements of an Comparator Circuit

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Document pages: 20 pages

Abstract: In this paper we introduce an approach to increase integration rate of elements of an comparator circuit. Framework the approach we consider a heterostructure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and or radiation defects should be optimized.

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