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Temperature Dependence of Atomic Ordering and Composition Modulation in Inassbbi Grown by Molecular Beam Epitaxy on GASB Substrates

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Document pages: 19 pages

Abstract: The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 °C and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. Both samples are free of observable defects. Improved crystal and optical quality are realized at 400 °C. The Bi incorporation coefficient increased at 280 °C. Lateral composition modulation in the Bi mole fraction is only observed in growth at 400 °C and CuPtB -type atomic ordering on the {111}B planes is only observed in growth at 280 °C.

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