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Drain Charactersitic Analysis of High Electron Mobility Transistor (Moshemt)

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Document pages: 6 pages

Abstract: A High-electron-mobility transistor, otherwise called a field-effect transistor consolidating an intersection between two materials with various band holes as the channel rather than a doped region. While lately, gallium nitride HEMTs have pulled in consideration because of their powerful execution. In this paper a MOSHEMT device is designed and afterward break down the device DC characteristic. MOSHEMT is a modified structure of HEMT. In MOSHEMT an oxide layer (Hf02) is embedded to the device. Characteristic dissect of device include the breaking down of channel current, gate leakage current and furthermore the Ioff Ion proportion of the device. HEMT transistors can work at higher frequencies.

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