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Study of Dielectric and Structural Properties of Polyimide-Nanocomposite Films.

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Document pages: 5 pages

Abstract: Efforts are being made, world over, to develop low dielectric (say κ < 2.0) materials for microelectronic applications. Polyimides (PIs) are among the most promising candidates for above applications as, in addition to low κ, they are thermally stable and have good adhesion to metal which is a requirement for fabricating microelectronics devices. Pure PI films, however, cannot be used as PI has dielectric constant of about 3.4. Thus, we have synthesized nanocomposite PI films having nano-pores or silica nanoparticles embedded in them as it is known that porosity leads to lowering of dielectric constant. This involved chemical modification of PI at precursor’s stage using Siloxanes modifiers. The films have been characterized for their thermal stability, structure and dielectric behaviour using techniques such as TGA, FTIR, AFM and impedance analyzer. This paper reports the details of synthesis and characterization of above films.

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