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Back Surface Recombination Velocity Dependent of Absorption Coefficient as Applied to Determine Base Optimum Thickness of an n+/p/p+ Silicon Solar Cell

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Document pages: 14 pages

Abstract: Themonochromatic absorption coefficient of silicon, inducing the light penetrationdepth into the base of the solar cell, is used to determine the optimumthickness necessary for the production of a large photocurrent. Theabsorption-generation-diffusion and recombination (bulk and surface) phenomenaare taken into account in the excess minority carrier continuity equation. Thesolution of this equation gives the photocurrent according to absorption and electronic parameters. Then from theobtained short circuit photocurrent expression, excess minority carrierback surface recombination velocity is determined, function of themonochromatic absorption coefficient at a given wavelength. This latter plottedversus base thickness yields the optimum thickness of an n+-p-p+ solar cell, for each wavelength, which is in the range close to the energy bandgap of the silicon material. This study provides a tool for improvement solarcell manufacture processes, through the mathematical relationship obtained fromthe thickness limit according to the absorption coefficient that allows basewidth optimization.

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