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Low Temperature Solution-Based Treatment for Highly Passivated Si/TiO2 Heterojunction

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Document pages: 3 pages

Abstract: Thin film-based second and third generation photovoltaics (PVs) are avidly investigated for their potential for utility scale applications. Organic thin film (PEDOT) and silicon-based PVs are shown to have moderate device efficiency. To further improve efficiency, silicon is sandwiched between thin films of PEDOT and TiO2. Thin films of TiO2 synthesized at 100°C have been shown to make efficient (~12 ) PEDOT Si TiO2-based PVs; TiO2 functions as a holeblocker. Lower efficiencies of the PVs than predicted by theory is attributed to poor passivation of the Si TiO2 interface. To improve the interface passivation, the Si TiO2 interface is treated under various chemical conditions. One such treatment yielded very high level of passivation (SRV ~ 15 cm s).

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