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Crystal Growth and Basic Transport and Magnetic Properties of MnBi 2Te 4

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Document pages: 14 pages

Abstract: We report successful growth of magnetic topological insulator (MTI) MnBi2Te4. Depending, upon the heating schedule the phase formation in terms of various Bi2Te3 + MnTe structures viz. MnBi2Te4, MnBi4Te7, MnBi6Te10 and MnTe are seen in powder X-ray diffraction of crushed resultant crystals. The heating schedule basically deals with growth of the crystal from melt at 9000C and very slow cooling (10C hr) to around 6000C with 24 hours hold time, followed by cooling to room temperature. Our detailed, PXRD Reitveld analysis showed that the resultant crystal is dominated by MnBi4Te7, MnBi6Te10 phases along with some MnTe content. The transport measurements showed a step like behavior at around 150K followed by cusp like structure in resistivity at around 25K (TP) due reported anti-ferromagnetic ordering of Mn. Both the resistivity transitions are seen clearly in dR dT measurements at 150K and 20K respectively. The 25Ktransition of the compound is also seen in magnetic susceptibility. Low temperature (5K) magneto-resistance (MR) in applied field of up to 6 Tesla exhibited -ve MR below 3 Tesla and +ve for higher fields. Also, seen are steps in MR below one Tesla. The studied MnBi2Te4 MTI crystal could be a possible candidate for Quantum Anomalous Hall (QAH) effect.

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