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Simulation of 6T and 8T SRAM Cell with Power Dissipation Analysis

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Document pages: 4 pages

Abstract: Reducing the power consumption in a VLSI circuits is a prime concern now a days. Memory circuits plays an important role in the design of electronic small power devices. Almost every digital systems is having memory as an important part in their design. The high speed circuits dissipate a considerable amount of power in a short time. In this paper conventional SRAM cell is modified little bit to reduce the dynamic power dissipation. The overall capacitance reduced by adding few extra transistors. Because of the fact that charging and the discharging of the bit lines consumes the most power , so 6T cell and 8T cell can be used to reduce the power by adding an extra number of transistors to the pull down path. In this paper 6T SRAM cell as well as 8T SRAM cell simulated and their performance compared in terms of power dissipation.

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